650V & 1200V 3rd Gen Silicon Carbide MOSFETs - Toshiba

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3rd-Generation SiC MOSFETs Offer High Performance

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650V & 1200V 3rd Gen Silicon Carbide MOSFETs - Toshiba

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SiC MOSFETs - Product Search Results

650V & 1200V 3rd Gen Silicon Carbide MOSFETs - Toshiba

GeneSiC Semiconductor's 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ - New Industry Products

3rd-Generation SiC MOSFETs Offer High Performance

Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

SiC Power Devices, Toshiba Electronic Devices & Storage Corporation